GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION

GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION

Authors

  • Pavlin Gramatikov SPACE RESEARCH AND TECHNOLOGY INSTITUTE – BAS, BULGARIA

DOI:

https://doi.org/10.46687/jsar.v15i1.250

Keywords:

GALLIUM NITRIDE, GAN-HEMT, HIGH ELECTRON MOBILITY TRANSISTOR, GAN TRANSISTOR, SIMULATION, MODELLING, GAN POWER DEVICES, SWITCHING POWER SUPPLY DESIGN, POWER SUPPLY EFFICIENCY

Abstract

Modelling and simulation of power GaN HEMT transistors and GaN devices are presented. Comparison and parameters for different GaN products are shown.

Author Biography

Pavlin Gramatikov, SPACE RESEARCH AND TECHNOLOGY INSTITUTE – BAS, BULGARIA

SPACE RESEARCH AND TECHNOLOGY INSTITUTE – BAS, BULGARIA

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Published

21.03.2023

How to Cite

Gramatikov, P. . (2023). GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION: GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION. JOURNAL SCIENTIFIC AND APPLIED RESEARCH, 15(1), 11–21. https://doi.org/10.46687/jsar.v15i1.250

Issue

Vol. 15 No. 1 (2019): Journal Scientific and Applied Research

Section

Space Research

License

Copyright (c) 2023 JOURNAL SCIENTIFIC AND APPLIED RESEARCH

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.